Exaggerated grain growth triggered by intrinsic defects; a TEM study

Imaging Extended Defects by TEM

In this invited talk, I will suggest where we are in our use of TEM for imaging extended defects and guess where we are going. Since the topic of this Symposium concerns advances in imaging and quantification of strain, local atomic structure, and the chemistry of extended defects, the present talk will emphasize the history and development of diffraction contrast methods for the analysis of ex...

In situ TEM study of grain growth in nanocrystalline copper thin films.

Nanocrystalline metals demonstrate a range of fascinating properties, including high levels of mechanical strength. However, as these materials are exposed to high temperatures, it is critical to determine the grain size evolution, as this process can drastically change the mechanical properties. In this work, nanocrystalline sputtered Cu thin films with 43 +/- 2 nm grain size were produced by ...

TEM study of defects versus growth orientations in heavily boron-doped diamond

Intrinsic defects and dopants in LiNH2: a first-principles study.

The lithium amide (LiNH(2)) + lithium hydride (LiH) system is one of the most attractive light-weight materials options for hydrogen storage. Its dehydrogenation involves mass transport in the bulk (amide) crystal through lattice defects. We present a first-principles study of native point defects and dopants in LiNH(2) using density functional theory. We find that both Li-related defects (the ...

Intrinsic Point Defects and Impurities in Silicon Crystal Growth

The incorporation of intrinsic point defects into a growing crystal is affected by the presence of impurities that can react with vacancies and self-interstitials. The critical value of the ratio of the growth rate, V , to the axial temperature gradient, G, ~V/G ratio! that separates the interstitial growth mode from the vacancy growth mode, is shifted by impurities, and this effect can be desc...